? semiconductor components industries, llc, 2001 april, 2001 rev. 0 1 publication order number: ntp75n06/d ntp75n06, ntb75n06 power mosfet 75 amps, 60 volts nchannel to220 and d 2 pak designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. typical applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 60 vdc draintogate voltage (r gs = 10 m w ) v dgr 60 vdc gatetosource voltage continuous nonrepetitive (t p 10 ms) v gs v gs 20 30 vdc drain current continuous @ t a = 25 c continuous @ t a = 100 c single pulse (t p 10 m s) i d i d i dm 75 50 225 adc apk total power dissipation @ t a = 25 c derate above 25 c total power dissipation @ t a = 25 c p d 214 1.4 2.4 w w/ c w operating and storage temperature range t j , t stg 55 to +175 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 50 vdc, v gs = 10 vdc, l = 0.3 mh i l(pk) = 75 a, v ds = 60 vdc) e as 844 mj thermal resistance junctiontocase junctiontoambient r q jc r q ja 0.7 62.5 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 75 amperes 60 volts r ds(on) = 9.5 m w device package shipping ordering information ntp75n06 to220ab 50 units/rail to220ab case 221a style 5 1 2 3 4 http://onsemi.com nchannel d s g marking diagrams & pin assignments ntx75n06 = device code ll = location code y = year ww = work week ntp75n06 llyww 1 gate 3 source 4 drain 2 drain ntb75n06 llyww 1 gate 3 source 4 drain 2 drain 1 2 3 4 d 2 pak case 418b style 2 ntb75n06 d 2 pak 50 units/rail ntb75n06t4 d 2 pak 800/tape & reel
ntp75n06, ntb75n06 http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (note 1.) (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 60 71 73 vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss 10 100 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics (note 1.) gate threshold voltage (note 1.) (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 2.0 2.8 8.0 4.0 vdc mv/ c static draintosource onresistance (note 1.) (v gs = 10 vdc, i d = 37.5 adc) r ds(on) 8.2 9.5 mohm static draintosource onvoltage (note 1.) (v gs = 10 vdc, i d = 75 adc) (v gs = 10 vdc, i d = 37.5 adc, t j = 150 c) v ds(on) 0.72 0.63 0.86 vdc forward transconductance (note 1.) (v ds = 15 vdc, i d = 37.5 adc) g fs 40.2 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 3220 4510 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 1020 1430 transfer capacitance f = 1 . 0 mhz) c rss 234 330 switching characteristics (note 2.) turnon delay time t d(on) 16 25 ns rise time (v dd = 30 vdc, i d = 75 adc, t r 112 155 turnoff delay time (v dd 30 vdc , i d 75 adc , v gs = 10 vdc, r g = 9.1 w ) (note 1.) t d(off) 90 125 fall time t f 100 140 gate charge (v 48 vd i 75 ad q t 92 130 nc (v ds = 48 vdc, i d = 75 adc, v gs = 10 vdc ) ( note 1. ) q 1 14 v gs = 10 vdc) (note 1 . ) q 2 44 sourcedrain diode characteristics forward onvoltage (i s = 75 adc, v gs = 0 vdc) (note 1.) (i s = 75 adc, v gs = 0 vdc, t j = 150 c) v sd 1.0 0.9 1.1 vdc reverse recovery time (i 75 ad v 0 vd t rr 77 ns (i s = 75 adc, v gs = 0 vdc, di s /dt = 100 a/ m s ) ( note 1. ) t a 49 di s /dt = 100 a/ m s) (note 1 . ) t b 28 reverse recovery stored charge q rr 0.16 m c 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperatures.
ntp75n06, ntb75n06 http://onsemi.com 3 0 120 3 60 2 1 i d , drain current (amps) 0 v gs , gatetosource voltage (v) i d , drain current (amps) r ds(on) , draintosource resistance ( w ) 160 v ds , draintosource voltage (v) 20 40 80 100 140 4 r ds(on) , draintosource resistance ( w ) 1.8 1.4 1.6 1.2 1 0.6 100 10 1000 10000 figure 1. onregion characteristics figure 2. transfer characteristics 080 60 40 20 100 160 figure 3. onresistance vs. gatetosource voltage i d , drain current (amps) figure 4. onresistance vs. drain current and gate voltage i d , drain current (amps) figure 5. onresistance variation with temperature t j , junction temperature ( c) figure 6. draintosource leakage current vs. voltage v ds , draintosource voltage (v) i dss , leakage (na) 50 50 25 0 25 75 100 2.5 3 7 04050 30 20 10 60 120 60 0 160 20 40 80 100 140 3.5 4 4.5 5 5.5 6 6.5 r ds(on) , draintosource resistance (normalized) 0.8 175 150 125 0.009 0.011 0.003 0.013 0.015 v gs = 10 v t j = 25 c t j = 100 c t j = 55 c i d = 37.5 a v gs = 10 v v ds 10 v t j = 25 c t j = 55 c t j = 100 c t j = 100 c t j = 125 c t j = 150 c v gs = 0 v t j = 25 c t j = 100 c t j = 55 c v gs = 10 v v gs = 6 v v gs = 5 v v gs = 4.5 v v gs = 5.5 v v gs = 8 v v gs = 7 v v gs = 15 v v gs = 6.5 v v gs = 9 v 0.007 0.005 120 140 0 80 60 40 20 100 160 0.009 0.011 0.003 0.013 0.015 0.007 0.005 120 140 2
ntp75n06, ntb75n06 http://onsemi.com 4 1000 100 10 1 0 200 400 600 800 1000 8 4 10 2 6 0 12 50 10 10 6000 5 0 c, capacitance (pf) 0 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gatetosource and draintosource voltage vs. total charge v gs , gatetosource voltage (v) 1 1000 10 100 1 100 figure 9. resistive switching time variations vs. gate resistance r g , gate resistance ( w ) figure 10. diode forward voltage vs. current v sd , sourcetodrain voltage (v) t, time (ns) figure 11. maximum rated forward biased safe operating area v ds , draintosource voltage (v) figure 12. maximum avalanche energy vs. starting junction temperature t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse draintosource avalanche energy (mj) 0.1 10 1 100 0 10 100 0.6 0.76 0.8 0.72 0.68 0.84 0.64 0.96 30 60 20 40 0 70 80 25 125 150 100 75 50 175 gatetosource or draintosource (v) 2000 4000 8000 10000 25 i s , source current (amps) 15 20 52030405060 0.86 0.92 r ds(on) limit thermal limit package limit v gs i d = 75 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss v gs = 20 v single pulse t c = 25 c v ds = 30 v i d = 75 a v gs = 5 v v gs = 0 v t j = 25 c i d = 75 a 10 ms 1 ms 100 m s 10 m s dc t f t d(off) t d(on) t r v ds q 2 q 1 q t 10 70 80 90 1 10
ntp75n06, ntb75n06 http://onsemi.com 5 r(t), effective transient thermal resistance (normalized) t, time ( m s) figure 13. thermal response 0.1 1.0 0.01 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse r q jc (t) = r(t) r q jc d curves apply for power pulse train shown read time at t 1 t j(pk) t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 1.0 10 0.1 0.01 0.001 0.0001 0.00001
ntp75n06, ntb75n06 http://onsemi.com 6 package dimensions to220 threelead to220ab case 221a09 issue aa style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
ntp75n06, ntb75n06 http://onsemi.com 7 package dimensions d 2 pak case 418b03 issue d style 2: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
ntp75n06, ntb75n06 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntp75n06/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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